- RS庫存編號:
- 168-7094
- 製造零件編號:
- STGW40H65DFB
- 製造商:
- STMicroelectronics
當前暫無庫存,可於2024/5/8發貨,3 工作日送達。
已增加
單價 毎管:30 个
HK$27.506
單位 | Per unit | Per Tube* |
30 - 30 | HK$27.506 | HK$825.18 |
60 - 90 | HK$26.956 | HK$808.68 |
120 + | HK$26.417 | HK$792.51 |
* 參考價格 |
- RS庫存編號:
- 168-7094
- 製造零件編號:
- STGW40H65DFB
- 製造商:
- STMicroelectronics
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 283 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |