STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247

COO (Country of Origin): CN

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 468 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.9mm
Width 5.1mm
Height 21.1mm
Dimensions 15.9 x 5.1 x 21.1mm
Gate Capacitance 2475pF
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Energy Rating 8.5mJ
450 現貨庫存,可於3工作日發貨。
單價 毎管:30 個
原價 HK$80.78
HK$ 70.071
Per unit
Per Tube*
30 +
* 參考價格