onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole

RS庫存編號:: 185-8956
製造零件編號:: FGAF40S65AQ
製造商:: onsemi

onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole

801 現貨庫存，可於3工作日發貨。

單價个（每托盘 3 ）

HK$27.193

單位	Per unit	Per Pack*
3 - 87	HK$27.193	HK$81.579
90 - 177	HK$26.517	HK$79.551
180 +	HK$26.107	HK$78.321
* 參考價格

RS庫存編號:: 185-8956
製造零件編號:: FGAF40S65AQ
製造商:: onsemi

產品概覽和技術數據資料表

Datasheet FGAF40S65AQ

法例與合規

不相容

COO (Country of Origin):: KR

產品詳細資訊

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.

Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

規格

Attribute	Value
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	94 W
Number of Transistors	1
Package Type	TO-3PF
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	15.7 x 5.7 x 24.7mm
Energy Rating	325mJ
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Gate Capacitance	2590pF