Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247
- RS庫存編號:
- 253-3507
- 製造零件編號:
- BIDW30N60T
- 製造商:
- Bourns
1786 現貨庫存，可於3工作日發貨。
已增加
單價 个（每托盘 2 ）
HK$31.345
| 單位 | Per unit | Per Pack* |
| 2 - 8 | HK$31.345 | HK$62.69 |
| 10 - 48 | HK$28.22 | HK$56.44 |
| 50 - 98 | HK$26.615 | HK$53.23 |
| 100 - 248 | HK$23.185 | HK$46.37 |
| 250 + | HK$22.715 | HK$45.43 |
| * 參考價格 | ||
- RS庫存編號:
- 253-3507
- 製造零件編號:
- BIDW30N60T
- 製造商:
- Bourns
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).
600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 230 W |
| Configuration | Single Diode |
| Package Type | TO-247 |