Infineon IRG4BC30FDPBF IGBT, 31 A 600 V, 3-Pin TO-220AB

  • RS庫存編號 541-1310
  • 製造零件編號 IRG4BC30FDPBF
  • 製造商 Infineon

Co-Pack IGBT up to 20A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Attribute Value
Maximum Continuous Collector Current 31 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-220AB
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.54mm
Width 4.69mm
Height 8.77mm
Dimensions 10.54 x 4.69 x 8.77mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
當前暫無庫存,可於2022/1/25發貨,3 工作日送達。
單價 個
HK$ 29.02
Per unit
1 - 24
25 - 99
100 - 249
250 - 499
500 +