Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS, Through Hole
- RS庫存編號:
- 601-2807
- 製造零件編號:
- GT30J322(Q)
- 製造商:
- Toshiba
1 現貨庫存，可於3工作日發貨。
已增加
單價 个
HK$33.83
| 單位 | Per unit |
| 1 - 19 | HK$33.83 |
| 20 - 49 | HK$32.99 |
| 50 - 99 | HK$32.16 |
| 100 + | HK$31.34 |
- RS庫存編號:
- 601-2807
- 製造零件編號:
- GT30J322(Q)
- 製造商:
- Toshiba
法例與合規
- COO (Country of Origin):
- JP
產品詳細資訊
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-3PNIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 21mm |
| Maximum Operating Temperature | +150 °C |