STMicroelectronics STGW20NC60VD IGBT, 60 A 600 V, 3-Pin TO-247

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IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.75mm
Width 5.15mm
Height 20.15mm
Dimensions 15.75 x 5.15 x 20.15mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
263 現貨庫存,可於3工作日發貨。
單價 個
HK$ 30.22
(不含稅)
單位
Per unit
1 - 4
HK$30.22
5 - 9
HK$30.13
10 - 19
HK$25.60
20 - 49
HK$25.52
50 +
HK$25.47
包裝方式: