Infineon IGW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247

  • RS庫存編號 752-8331
  • 製造零件編號 IGW50N60H3FKSA1
  • 製造商 Infineon
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Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 333 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.13mm
Width 5.21mm
Height 21.1mm
Dimensions 16.13 x 5.21 x 21.1mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
8 現貨庫存,可於3工作日發貨。
單價 個
HK$ 37.47
(不含稅)
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Per unit
1 - 14
HK$37.47
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HK$36.51
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