- RS庫存編號:
- 756-0552
- 製造零件編號:
- GT50J322(Q)
- 製造商:
- Toshiba
此產品已停售
- RS庫存編號:
- 756-0552
- 製造零件編號:
- GT50J322(Q)
- 製造商:
- Toshiba
法例與合規
產品詳細資訊
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 130 W |
Package Type | TO-3PLH |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 0.25µs |
Transistor Configuration | Single |
Dimensions | 26 x 20.5 x 5.2mm |
Maximum Operating Temperature | +150 °C |