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    Fuji Electric FGW40N120HD IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

    RS庫存編號:
    772-9032P
    製造零件編號:
    FGW40N120HD
    製造商:
    Fuji Electric
    Fuji Electric

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    此產品已停售
    RS庫存編號:
    772-9032P
    製造零件編號:
    FGW40N120HD
    製造商:
    Fuji Electric
    COO (Country of Origin):
    JP

    法例與合規

    COO (Country of Origin):
    JP

    產品詳細資訊

    IGBT Discretes, Fuji Electric



    IGBT Discretes & Modules, Fuji Electric


    The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

    規格

    AttributeValue
    Maximum Continuous Collector Current40 A
    Maximum Collector Emitter Voltage1200 V
    Maximum Gate Emitter Voltage±20V
    Maximum Power Dissipation340 W
    Package TypeTO-247
    Mounting TypeThrough Hole
    Channel TypeN
    Pin Count3
    Transistor ConfigurationSingle
    Dimensions15.9 x 5.03 x 20.95mm
    Minimum Operating Temperature-40 °C
    Maximum Operating Temperature+175 °C
    此產品已停售