IXYS IXYP8N90C3 IGBT, 48 A 900 V, 3-Pin TO-220

  • RS庫存編號 791-7429
  • 製造零件編號 IXYP8N90C3
  • 製造商 IXYS
產品概覽和技術數據資料表
法例與合規
相容
COO (Country of Origin): US
產品詳細資訊

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 48 A
Maximum Collector Emitter Voltage 900 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 125 W
Package Type TO-220
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 50kHz
Transistor Configuration Single
Length 10.66mm
Width 4.83mm
Height 16mm
Dimensions 10.66 x 4.83 x 16mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
75 現貨庫存,可於3工作日發貨。
單價 /個 (每包:5個)
HK$ 20.522
(不含稅)
單位
Per unit
Per Pack*
5 - 20
HK$20.522
HK$102.61
25 - 45
HK$19.754
HK$98.77
50 - 245
HK$19.032
HK$95.16
250 - 495
HK$18.306
HK$91.53
500 +
HK$18.05
HK$90.25
* 參考價格
包裝方式: