STMicroelectronics STGWT60V60DLF IGBT, 60 A 600 V, 3-Pin TO-3P

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IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 375 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.7mm
Width 5.7mm
Height 26.7mm
Dimensions 15.7 x 5.7 x 26.7mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
75 現貨庫存,可於3工作日發貨。
單價 /個 (每包:5個)
HK$ 31.728
(不含稅)
單位
Per unit
Per Pack*
5 - 45
HK$31.728
HK$158.64
50 - 70
HK$31.104
HK$155.52
75 - 145
HK$30.48
HK$152.40
150 - 295
HK$30.00
HK$150.00
300 +
HK$29.40
HK$147.00
* 參考價格
包裝方式: