- RS庫存編號:
- 791-7671
- 製造零件編號:
- STGWT60V60DLF
- 製造商:
- STMicroelectronics
此產品已停售
- RS庫存編號:
- 791-7671
- 製造零件編號:
- STGWT60V60DLF
- 製造商:
- STMicroelectronics
法例與合規
產品詳細資訊
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 60 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 375 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.7 x 5.7 x 26.7mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |