STMicroelectronics STGFW30V60DF IGBT, 60 A 600 V, 3-Pin TO-3PF

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IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 58 W
Package Type TO-3PF
Mounting Type Through Hole
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.7mm
Width 5.7mm
Height 26.7mm
Dimensions 15.7 x 5.7 x 26.7mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
206 現貨庫存,可於3工作日發貨。
單價 /個 (每包:2個)
HK$ 27.885
(不含稅)
單位
Per unit
Per Pack*
2 - 18
HK$27.885
HK$55.77
20 - 38
HK$27.33
HK$54.66
40 - 98
HK$26.775
HK$53.55
100 - 498
HK$26.22
HK$52.44
500 +
HK$25.665
HK$51.33
* 參考價格
包裝方式: