STMicroelectronics STGF3NC120HD IGBT, 6 A 1200 V, 3-Pin TO-220FP

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IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 6 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 25 W
Package Type TO-220FP
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 10.4mm
Width 4.6mm
Height 16.4mm
Dimensions 10.4 x 4.6 x 16.4mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
135 現貨庫存,可於3工作日發貨。
單價 /個 (每包:5個)
HK$ 11.814
(不含稅)
單位
Per unit
Per Pack*
5 - 5
HK$11.814
HK$59.07
10 - 95
HK$10.972
HK$54.86
100 - 495
HK$10.758
HK$53.79
500 - 995
HK$10.548
HK$52.74
1000 +
HK$10.344
HK$51.72
* 參考價格