STMicroelectronics STGW30NC120HD IGBT, 60 A 1200 V, 3-Pin TO-247

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IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 220 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.75mm
Width 5.15mm
Height 20.15mm
Dimensions 15.75 x 5.15 x 20.15mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
58 現貨庫存,可於3工作日發貨。
單價 /個 (每包:2個)
HK$ 26.925
(不含稅)
單位
Per unit
Per Pack*
2 - 8
HK$26.925
HK$53.85
10 - 98
HK$22.87
HK$45.74
100 - 248
HK$19.82
HK$39.64
250 - 998
HK$19.005
HK$38.01
1000 +
HK$18.64
HK$37.28
* 參考價格