STMicroelectronics STGW39NC60VD IGBT, 80 A 600 V, 3-Pin TO-247

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IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 250 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.75mm
Width 5.15mm
Height 20.15mm
Dimensions 15.75 x 5.15 x 20.15mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
98 現貨庫存,可於3工作日發貨。
單價 /個 (每包:2個)
HK$ 28.69
(不含稅)
單位
Per unit
Per Pack*
2 - 2
HK$28.69
HK$57.38
4 - 8
HK$28.115
HK$56.23
10 - 18
HK$23.075
HK$46.15
20 - 48
HK$22.61
HK$45.22
50 +
HK$22.57
HK$45.14
* 參考價格