Toshiba GT30J341,Q(O IGBT, 59 A 600 V, 3-Pin TO-3PN, Through Hole
- RS庫存編號:
- 799-4867
- 製造零件編號:
- GT30J341,Q(O
- 製造商:
- Toshiba
90 現貨庫存，可於3工作日發貨。
已增加
單價 个
HK$38.49
| 單位 | Per unit |
| 1 - 19 | HK$38.49 |
| 20 - 49 | HK$36.96 |
| 50 - 99 | HK$35.41 |
| 100 + | HK$34.64 |
- RS庫存編號:
- 799-4867
- 製造零件編號:
- GT30J341,Q(O
- 製造商:
- Toshiba
法例與合規
- COO (Country of Origin):
- JP
產品詳細資訊
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 59 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 230 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | +175 °C |