ON Semiconductor NGTG20N60L2TF1G IGBT, 105 (Pulse) A 600 V, 3-Pin TO-3PF

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IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Attribute Value
Maximum Continuous Collector Current 105 (Pulse) A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 64 W
Package Type TO-3PF
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.5mm
Width 5.5mm
Height 26.5mm
Dimensions 15.5 x 5.5 x 26.5mm
Maximum Operating Temperature +150 °C
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