STMicroelectronics STGB15H60DF IGBT, 30 A 600 V, 3-Pin D2PAK (TO-263)

產品概覽和技術數據資料表
法例與合規
相容
產品詳細資訊

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 115 W
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.4mm
Width 9.35mm
Height 4.6mm
Dimensions 10.4 x 9.35 x 4.6mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
5536 現貨庫存,可於3工作日發貨。
單價 /個 (每包:2個)
HK$ 24.385
(不含稅)
單位
Per unit
Per Pack*
2 - 18
HK$24.385
HK$48.77
20 - 48
HK$19.95
HK$39.90
50 - 98
HK$19.56
HK$39.12
100 - 248
HK$16.065
HK$32.13
250 +
HK$15.75
HK$31.50
* 參考價格
包裝方式: