ON Semiconductor ISL9V5036S3ST IGBT, 46 A 420 V, 3-Pin D2PAK (TO-263)

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Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 46 A
Maximum Collector Emitter Voltage 420 V
Maximum Gate Emitter Voltage ±14V
Maximum Power Dissipation 250 W
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.67mm
Width 9.65mm
Height 4.83mm
Dimensions 10.67 x 9.65 x 4.83mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +175 °C
75 現貨庫存,可於3工作日發貨。
單價 /個 (每包:5個)
HK$ 22.248
(不含稅)
單位
Per unit
Per Pack*
5 - 45
HK$22.248
HK$111.24
50 - 195
HK$18.532
HK$92.66
200 - 395
HK$16.04
HK$80.20
400 - 795
HK$15.726
HK$78.63
800 +
HK$11.972
HK$59.86
* 參考價格
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