STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247

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COO (Country of Origin): CN
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IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 200 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.75mm
Width 5.15mm
Height 24.45mm
Dimensions 15.75 x 5.15 x 24.45mm
Minimum Operating Temperature -55 °C
Gate Capacitance 2170pF
Maximum Operating Temperature +150 °C
Energy Rating 1435µJ
40 現貨庫存,可於3工作日發貨。
單價 /個 (每包:5個)
HK$ 51.322
(不含稅)
單位
Per unit
Per Pack*
5 - 20
HK$51.322
HK$256.61
25 - 145
HK$36.132
HK$180.66
150 - 295
HK$31.42
HK$157.10
300 - 595
HK$29.922
HK$149.61
600 +
HK$28.502
HK$142.51
* 參考價格
包裝方式: