Infineon IR2011STRPBF Dual High and Low Side MOSFET Power Driver, 1A, 10 → 20 V 8-Pin, SOIC

  • RS庫存編號 170-2302
  • 製造零件編號 IR2011STRPBF
  • 製造商 Infineon

MOSFET & IGBT Gate Drivers, High and Low Side, Infineon

Gate Driver ICs from Infineon to control MOSFET or IGBT power devices in high-side and low-side configurations.

200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.

Summary of Features:
Floating Channel designed for bootstrap operation, dV/dt immune
Fully operational to 200 V Tolerant to negative transient voltage
Tolerant to negative tansient voltage
dV/dt immune
Gate drive supply range from 10 V to 20 V
Independent low and high side channels
Input logic HIN/LIN active high
Undervoltage lockout for both channels
3.3 V and 5 V input logic compatible
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels

MOSFET & IGBT Drivers, Infineon (International Rectifier)

Attribute Value
Number of Drivers 2
Minimum Operating Supply Voltage 10 V
Maximum Operating Supply Voltage 20 V
Topology High and Low Side
Mounting Type Surface Mount
Peak Output Current 1A
Number of Outputs 2
Polarity Non-Inverting
Package Type SOIC
Pin Count 8
High and Low Sides Dependency Independent
Time Delay 80ns
Dimensions 5 x 4 x 1.5mm
Length 5mm
Input Bias Current 20µA
Maximum Operating Temperature +125 °C
Height 1.5mm
Rise Time 50ns
Minimum Operating Temperature -40 °C
Fall Time 35ns
Width 4mm
當前暫無庫存,可於2020/3/30發貨,3 工作日送達。
單價 個 (在毎卷:2500)
HK$ 12.565
Per unit
Per Reel*
2500 +
* 參考價格