- RS庫存編號:
- 193-509P
- 製造零件編號:
- IXFH170N10P
- 製造商:
- IXYS
- RS庫存編號:
- 193-509P
- 製造零件編號:
- IXFH170N10P
- 製造商:
- IXYS
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 170 A |
Maximum Drain Source Voltage | 100 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 9 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 714 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Width | 5.3mm |
Transistor Material | Si |
Length | 16.26mm |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 198 nC @ 10 V |
Height | 21.46mm |
Series | HiperFET, Polar |
Minimum Operating Temperature | -55 °C |