- RS庫存編號:
- 194-259
- 製造零件編號:
- IXFN180N15P
- 製造商:
- IXYS
- RS庫存編號:
- 194-259
- 製造零件編號:
- IXFN180N15P
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 150 A |
Maximum Drain Source Voltage | 150 V |
Series | HiperFET, Polar |
Package Type | SOT-227B |
Mounting Type | Screw Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 11 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 680 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 38.23mm |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 240 nC @ 10 V |
Maximum Operating Temperature | +175 °C |
Width | 25.42mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 9.6mm |