P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 Infineon IRLML6401TRPBF

RS庫存編號:: 301-316
製造零件編號:: IRLML6401TRPBF
製造商:: Infineon

P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 Infineon IRLML6401TRPBF

50 現貨庫存，可於3工作日發貨。

單價个（每托盘 5 ）

HK$2.756

單位	Per unit	Per Pack*
5 - 745	HK$2.756	HK$13.78
750 - 1495	HK$2.686	HK$13.43
1500 +	HK$2.648	HK$13.24
* 參考價格

RS庫存編號:: 301-316
製造零件編號:: IRLML6401TRPBF
製造商:: Infineon

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

P-Channel Power MOSFET 12V to 20V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

規格

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4.3 A
Maximum Drain Source Voltage	12 V
Package Type	Micro
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	50 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.95V
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	10 nC @ 5 V
Transistor Material	Si
Width	1.4mm
Maximum Operating Temperature	+150 °C
Length	3.04mm
Height	1.02mm
Minimum Operating Temperature	-55 °C