Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

RS庫存編號:: 349-152
製造零件編號:: ISG0616N10NM5HSCATMA1
製造商:: Infineon

Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

可享批量折扣

小計（1 包，共 2 件）*

HK$101.20

訂單超過 HK$250.00 免費送貨

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從 2026年7月27日發貨

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單位	每單位	每包*
2 - 18	HK$50.60	HK$101.20
20 - 198	HK$45.60	HK$91.20
200 - 998	HK$42.00	HK$84.00
1000 - 1998	HK$39.00	HK$78.00
2000 +	HK$34.95	HK$69.90

* 參考價格

RS庫存編號:: 349-152
製造零件編號:: ISG0616N10NM5HSCATMA1
製造商:: Infineon

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透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	139A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PG-WHITFN-10-1
	Series	ISG
	Mount Type	Surface
	Pin Count	10
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	167W
	Typical Gate Charge Qg @ Vgs	52nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 139A
	Maximum Drain Source Voltage Vds 100V
	Package Type PG-WHITFN-10-1
	Series ISG
	Mount Type Surface
	Pin Count 10
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 167W
	Typical Gate Charge Qg @ Vgs 52nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - ISG0616N10NM5HSCATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS 5 dual n-channel 100 V MOSFETs in scalable power block with dual-side cooling capability. Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 4.0 mΩ each with Q1/Q2 in a half-bridge configuration. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual side cooling capability boosts power throughput by an additional 25% with superior thermal management.

Minimized conduction losses

Reduced voltage overshoot

High power capability

Superior thermal performance

Lowest loop inductance

Superior switching performance/EMI

Superior thermal management

Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

訂單超過 HK$250.00 免費送貨

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