IPG20N04S4L11ATMA1 Dual N-Channel MOSFET, 20 A, 40 V OptiMOS T2, 8-Pin TDSON Infineon

  • RS庫存編號 124-8739
  • 製造零件編號 IPG20N04S4L11ATMA1
  • 製造商 Infineon
COO (Country of Origin): CN

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute Value
Channel Type N
Maximum Continuous Drain Current 20 A
Maximum Drain Source Voltage 40 V
Package Type TDSON
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 15.5 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.2V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 41 W
Transistor Configuration Isolated
Maximum Gate Source Voltage -16 V, +16 V
Number of Elements per Chip 2
Minimum Operating Temperature -55 °C
Width 6.15mm
Typical Gate Charge @ Vgs 20 nC @ 10 V
Height 1mm
Series OptiMOS T2
Maximum Operating Temperature +175 °C
Length 5.15mm
Transistor Material Si
當前暫無庫存,可於2020/6/24發貨,3 工作日送達。
單價 個 (在毎卷:5000)
HK$ 3.904
Per unit
Per Reel*
5000 +
* 參考價格