IPB120P04P4L03ATMA1 P-Channel MOSFET, 120 A, 40 V OptiMOS P, 3-Pin D2PAK Infineon

  • RS庫存編號 124-8751
  • 製造零件編號 IPB120P04P4L03ATMA1
  • 製造商 Infineon
COO (Country of Origin): CN

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute Value
Channel Type P
Maximum Continuous Drain Current 120 A
Maximum Drain Source Voltage 40 V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 5.2 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.2V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 136 W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Number of Elements per Chip 1
Transistor Material Si
Width 9.25mm
Minimum Operating Temperature -55 °C
Series OptiMOS P
Maximum Operating Temperature +175 °C
Length 10mm
Typical Gate Charge @ Vgs 180 nC @ 10 V
Height 4.4mm
9000 現貨庫存,可於3工作日發貨。
單價 個 (在毎卷:1000)
HK$ 11.253
Per unit
Per Reel*
1000 - 1000
2000 +
* 參考價格