P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK Infineon IPB120P04P4L03ATMA1
- RS庫存編號:
- 124-8751
- 製造零件編號:
- IPB120P04P4L03ATMA1
- 製造商:
- Infineon
當前暫無庫存，可於2025/5/20發貨，3 工作日送達。
已增加
單價 个（每带 1000 ）
HK$15.169
| 單位 | Per unit | Per Reel* |
| 1000 - 1000 | HK$15.169 | HK$15,169.00 |
| 2000 - 3000 | HK$14.866 | HK$14,866.00 |
| 4000 + | HK$14.569 | HK$14,569.00 |
| * 參考價格 | ||
- RS庫存編號:
- 124-8751
- 製造零件編號:
- IPB120P04P4L03ATMA1
- 製造商:
- Infineon
法例與合規
豁免
- COO (Country of Origin):
- CN
產品詳細資訊
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | D2PAK (TO-263) |
| Series | OptiMOS P |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 136 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Width | 9.25mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 10mm |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V |
| Height | 4.4mm |
| Minimum Operating Temperature | -55 °C |