FQPF2N60C N-Channel MOSFET, 2 A, 600 V QFET, 3-Pin TO-220F ON Semiconductor

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COO (Country of Origin): MY
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QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

規格
Attribute Value
Channel Type N
Maximum Continuous Drain Current 2 A
Maximum Drain Source Voltage 600 V
Package Type TO-220F
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 4.7 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 23 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Transistor Material Si
Minimum Operating Temperature -55 °C
Length 10.16mm
Width 4.7mm
Height 9.19mm
Series QFET
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 8.5 nC @ 10 V
150 現貨庫存,可於3工作日發貨。
單價 毎管:50 個
HK$ 6.895
(不含稅)
單位
Per unit
Per Tube*
50 +
HK$6.895
HK$344.75
* 參考價格