FQP3N30 N-Channel MOSFET, 3.2 A, 300 V QFET, 3-Pin TO-220 ON Semiconductor

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COO (Country of Origin): MY
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QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

規格
Attribute Value
Channel Type N
Maximum Continuous Drain Current 3.2 A
Maximum Drain Source Voltage 300 V
Package Type TO-220
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 2.2 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 55 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Length 10.67mm
Minimum Operating Temperature -55 °C
Transistor Material Si
Width 4.7mm
Typical Gate Charge @ Vgs 5.5 nC @ 10 V
Maximum Operating Temperature +150 °C
Height 16.3mm
Series QFET
600 現貨庫存,可於3工作日發貨。
單價 毎管:50 個
HK$ 6.733
(不含稅)
單位
Per unit
Per Tube*
50 +
HK$6.733
HK$336.65
* 參考價格