IRFR8314TRPBF N-Channel MOSFET, 179 A, 30 V HEXFET, 3-Pin DPAK Infineon

  • RS庫存編號 165-8287
  • 製造零件編號 IRFR8314TRPBF
  • 製造商 Infineon
COO (Country of Origin): MX

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute Value
Channel Type N
Maximum Continuous Drain Current 179 A
Maximum Drain Source Voltage 30 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 3.1 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.2V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 125 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Width 7.49mm
Minimum Operating Temperature -55 °C
Length 6.73mm
Height 2.39mm
Maximum Operating Temperature +175 °C
Typical Gate Charge @ Vgs 36 nC @ 4.5 V
Transistor Material Si
Forward Diode Voltage 1V
當前暫無庫存,可於2020/5/21發貨,3 工作日送達。
單價 個 (在毎卷:2000)
HK$ 4.60
Per unit
Per Reel*
2000 +
* 參考價格