N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 Taiwan Semi TSM4NB60CI C0G
- RS庫存編號:
- 171-3626
- 製造零件編號:
- TSM4NB60CI C0G
- 製造商:
- Taiwan Semiconductor
此產品已停售
- RS庫存編號:
- 171-3626
- 製造零件編號:
- TSM4NB60CI C0G
- 製造商:
- Taiwan Semiconductor
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Taiwan Semiconductor 600V, 4A, 2. 5Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power Supply and lighting applications.
100% Avalanche tested
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
Operating temperature ranges between -55 °C to +150 °C
25W max. power dissipation
Gate threshold voltage ranges between 2.5V-4.5V
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
Operating temperature ranges between -55 °C to +150 °C
25W max. power dissipation
Gate threshold voltage ranges between 2.5V-4.5V
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | ITO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 25 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 14.5 nC @ 10 V |
| Width | 6.1mm |
| Length | 6.5mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.13V |
| Height | 2.28mm |
| Minimum Operating Temperature | -55 °C |