- RS庫存編號:
- 171-3641
- 製造零件編號:
- TSM7N90CZ C0G
- 製造商:
- Taiwan Semiconductor
此產品已停售
- RS庫存編號:
- 171-3641
- 製造零件編號:
- TSM7N90CZ C0G
- 製造商:
- Taiwan Semiconductor
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Taiwan Semiconductor 900V, 7A, 1. 9Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power Supply and lighting applications.
Low RDS(on) 1.9Ω (Max.)
Low gate charge typical @49nC (Typ.)
Improve dV/dt capability
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
Operating temperature ranges between -55 °C to +150 °C
250W max. power dissipation
Gate threshold voltage ranges between 2V-4V
Low gate charge typical @49nC (Typ.)
Improve dV/dt capability
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
Operating temperature ranges between -55 °C to +150 °C
250W max. power dissipation
Gate threshold voltage ranges between 2V-4V
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 7 A |
Maximum Drain Source Voltage | 900 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.9 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 250 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 10mm |
Typical Gate Charge @ Vgs | 49 nC @ 10 V |
Width | 4.19mm |
Height | 14.25mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.4V |