- RS庫存編號:
- 171-3681
- 製造零件編號:
- TSM60NB260CI C0G
- 製造商:
- Taiwan Semiconductor
此產品已停售
- RS庫存編號:
- 171-3681
- 製造零件編號:
- TSM60NB260CI C0G
- 製造商:
- Taiwan Semiconductor
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Taiwan Semiconductor 600V, 13A, 0. 26Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power Supply and AC/DC LED lighting applications.
Super-Junction technology
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
100% UIL tested
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
32.1W max. power dissipation
Gate threshold voltage ranges between 2V-4V
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
100% UIL tested
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
32.1W max. power dissipation
Gate threshold voltage ranges between 2V-4V
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 13 A |
Maximum Drain Source Voltage | 600 V |
Package Type | ITO-220S |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 260 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 32.1 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Maximum Operating Temperature | +150 °C |
Length | 10mm |
Typical Gate Charge @ Vgs | 30 nC @ 10 V |
Number of Elements per Chip | 1 |
Width | 4.6mm |
Height | 15mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.4V |