- RS庫存編號:
- 171-3688
- 製造零件編號:
- TSM1NB60CH C5G
- 製造商:
- Taiwan Semiconductor
此產品已停售
- RS庫存編號:
- 171-3688
- 製造零件編號:
- TSM1NB60CH C5G
- 製造商:
- Taiwan Semiconductor
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Taiwan Semiconductor 600V, 1A, 10Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power supply, lighting and charger applications.
Advanced planar process
100% avalanche tested
Low RDS(ON) 8Ω (Typ.)
Low gate charge typical @ 6.1 nC (Typ.)
Low Crss typical @4.2pF (Typ.)
Operating temperature ranges between -55 °C to +150 °C
39W max. power dissipation
Gate threshold voltage ranges between 2.5V-4.5V
100% avalanche tested
Low RDS(ON) 8Ω (Typ.)
Low gate charge typical @ 6.1 nC (Typ.)
Low Crss typical @4.2pF (Typ.)
Operating temperature ranges between -55 °C to +150 °C
39W max. power dissipation
Gate threshold voltage ranges between 2.5V-4.5V
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 1 A |
Maximum Drain Source Voltage | 600 V |
Package Type | IPAK (TO-251) |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 10 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 39 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Length | 6.6mm |
Typical Gate Charge @ Vgs | 6.1 nC @ 10 V |
Number of Elements per Chip | 1 |
Width | 2.3mm |
Maximum Operating Temperature | +150 °C |
Forward Diode Voltage | 1.4V |
Minimum Operating Temperature | -55 °C |
Height | 6.1mm |