N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3
- RS庫存編號:
- 177-5342
- 製造零件編號:
- IXFN210N30P3
- 製造商:
- IXYS
270 現貨庫存，可於3工作日發貨。
已增加
單價 毎管：10 个
HK$334.523
| 單位 | Per unit | Per Tube* |
| 10 - 10 | HK$334.523 | HK$3,345.23 |
| 20 - 30 | HK$327.833 | HK$3,278.33 |
| 40 + | HK$321.276 | HK$3,212.76 |
| * 參考價格 | ||
- RS庫存編號:
- 177-5342
- 製造零件編號:
- IXFN210N30P3
- 製造商:
- IXYS
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 192 A |
| Maximum Drain Source Voltage | 300 V |
| Series | HiperFET, Polar3 |
| Package Type | SOT-227 |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 14.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.5 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 25.07mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 268 nC @ 10 V |
| Transistor Material | Si |
| Length | 38.23mm |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |