- RS庫存編號:
- 230-9089P
- 製造零件編號:
- NTHL099N60S5
- 製造商:
- onsemi
288 現貨庫存,可於3工作日發貨。
已增加
單價 个 (以每管裝提供)
HK$53.29
單位 | Per unit |
10 - 49 | HK$53.29 |
50 - 99 | HK$51.68 |
100 - 249 | HK$50.13 |
250 + | HK$48.64 |
- RS庫存編號:
- 230-9089P
- 製造零件編號:
- NTHL099N60S5
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency.
Ultra Low Gate Charge (Typ. Qg= 48 nC)
Low switching loss
Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)
Low switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
650 V @ TJ = 150°C
Typ. RDS(on) = 79.2 m Ω
100% Avalanche Tested
RoHS Compliant
Internal Gate Resistance: 6.9 Ω
Low switching loss
Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)
Low switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
650 V @ TJ = 150°C
Typ. RDS(on) = 79.2 m Ω
100% Avalanche Tested
RoHS Compliant
Internal Gate Resistance: 6.9 Ω
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 33 A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-247 |
Series | SUPERFET V |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 0.099 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Number of Elements per Chip | 1 |
Transistor Material | Si |