IRFP064NPBF N-Channel MOSFET, 110 A, 55 V HEXFET, 3-Pin TO-247AC Infineon

  • RS庫存編號 541-0008
  • 製造零件編號 IRFP064NPBF
  • 製造商 Infineon
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N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

規格
Attribute Value
Channel Type N
Maximum Continuous Drain Current 110 A
Maximum Drain Source Voltage 55 V
Package Type TO-247AC
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 8 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 200 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Width 5.3mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 170 nC @ 10 V
Height 20.3mm
Series HEXFET
Maximum Operating Temperature +175 °C
Length 15.9mm
Transistor Material Si
97 現貨庫存,可於3工作日發貨。
單價 個
HK$ 21.74
(不含稅)
單位
Per unit
1 - 4
HK$21.74
5 - 9
HK$20.20
10 - 19
HK$19.60
20 +
HK$19.40
包裝方式: