IRF4905SPBF P-Channel MOSFET, 74 A, 55 V HEXFET, 3-Pin D2PAK Infineon

  • RS庫存編號 650-3678
  • 製造零件編號 IRF4905SPBF
  • 製造商 Infineon
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COO (Country of Origin): MX
產品詳細資訊

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

規格
Attribute Value
Channel Type P
Maximum Continuous Drain Current 74 A
Maximum Drain Source Voltage 55 V
Maximum Drain Source Resistance 20 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage -20 V, +20 V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 3.8 W
Typical Gate Charge @ Vgs 180 nC @ 10 V
Typical Turn-Off Delay Time 61 ns
Minimum Operating Temperature -55 °C
Typical Turn-On Delay Time 18 ns
Transistor Material Si
Number of Elements per Chip 1
Typical Input Capacitance @ Vds 3400 pF@ 25 V
Dimensions 10.54 x 8.81 x 4.69mm
Length 10.54mm
Height 4.69mm
Series HEXFET
Maximum Operating Temperature +175 °C
Width 8.81mm
85 現貨庫存,可於3工作日發貨。
單價 /個 (每包:5個)
HK$ 19.818
(不含稅)
單位
Per unit
Per Pack*
5 - 5
HK$19.818
HK$99.09
10 - 15
HK$13.47
HK$67.35
20 - 35
HK$11.794
HK$58.97
40 +
HK$9.70
HK$48.50
* 參考價格