N-Channel MOSFET, 4.5 A, 100 V, 8-Pin SOIC Fairchild FDS3692
- RS庫存編號:
- 671-0501
- 製造零件編號:
- FDS3692
- 製造商:
- Fairchild Semiconductor
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單價 /個 (每包:5個)
HK$6.978
| 單位 | Per unit | Per Pack* |
| 5 - 20 | HK$6.978 | HK$34.89 |
| 25 - 95 | HK$5.596 | HK$27.98 |
| 100 - 245 | HK$5.204 | HK$26.02 |
| 250 - 495 | HK$4.756 | HK$23.78 |
| 500 + | HK$4.198 | HK$20.99 |
| * 參考價格 | ||
包裝方式：
- RS庫存編號:
- 671-0501
- 製造零件編號:
- FDS3692
- 製造商:
- Fairchild Semiconductor
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
規格
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 4.5 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 60 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4mm |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V |
| Transistor Material | Si |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |
| Series | UltraFET |