2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor

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Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

規格
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Voltage 60 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 5 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 400 mW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Height 5.33mm
Width 4.19mm
Transistor Material Si
Minimum Operating Temperature -55 °C
Length 5.2mm
6620 現貨庫存,可於3工作日發貨。
單價 /個 (每包:20個)
HK$ 2.284
(不含稅)
單位
Per unit
Per Pack*
20 - 20
HK$2.284
HK$45.68
40 - 80
HK$2.238
HK$44.76
100 - 180
HK$1.235
HK$24.70
200 - 380
HK$1.21
HK$24.20
400 +
HK$1.186
HK$23.72
* 參考價格
包裝方式: