Infineon HEXFET Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-220

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RS庫存編號:
688-6850
製造零件編號:
IRF3710ZPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

160W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

82nC

Maximum Operating Temperature

175°C

Height

8.77mm

Length

10.54mm

Standards/Approvals

No

Automotive Standard

No

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Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

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A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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