- RS庫存編號:
- 688-6942
- 製造零件編號:
- IRFB4229PBF
- 製造商:
- Infineon
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- RS庫存編號:
- 688-6942
- 製造零件編號:
- IRFB4229PBF
- 製造商:
- Infineon
法例與合規
產品詳細資訊
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
The Infineon IRFB4229 is the 250V single N-channel strongIRFET power MOSFET in a TO-220 package. The StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Industry standard through-hole power package
High-current rating
Product qualification according to JEDEC standard
High-current rating
Product qualification according to JEDEC standard
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 46 A |
Maximum Drain Source Voltage | 250 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 46 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 330 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Typical Gate Charge @ Vgs | 72 nC @ 10 V |
Number of Elements per Chip | 1 |
Length | 10.66mm |
Maximum Operating Temperature | +175 °C |
Width | 4.82mm |
Transistor Material | Si |
Height | 9.02mm |
Series | HEXFET |
Minimum Operating Temperature | -40 °C |