N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 Toshiba TK20E60W,S1VX(S

此產品已停售

HK$33.802

个（每托盘 5 ）

RS庫存編號: 827-6160

產品概覽和技術數據資料表

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Toshiba

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	155 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	165 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.45mm
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	48 nC @ 10 V
Length	10.16mm
Maximum Operating Temperature	+150 °C
Height	15.1mm
Series	DTMOSIV