N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-3PN IXYS IXFQ28N60P3
- RS庫存編號:
- 802-4451
- 製造零件編號:
- IXFQ28N60P3
- 製造商:
- IXYS
本地庫存暫不足，貨期請向RS查詢
已增加
單價 个（每托盘 2 ）
HK$55.215
| 單位 | Per unit | Per Pack* |
| 2 - 6 | HK$55.215 | HK$110.43 |
| 8 - 14 | HK$53.835 | HK$107.67 |
| 16 + | HK$53.00 | HK$106.00 |
| * 參考價格 | ||
- RS庫存編號:
- 802-4451
- 製造零件編號:
- IXFQ28N60P3
- 製造商:
- IXYS
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 28 A |
| Maximum Drain Source Voltage | 600 V |
| Series | HiperFET, Polar3 |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 260 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 695 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 4.9mm |
| Maximum Operating Temperature | +150 °C |
| Length | 15.8mm |
| Typical Gate Charge @ Vgs | 50 nC @ 10 V |
| Transistor Material | Si |
| Height | 20.3mm |
| Minimum Operating Temperature | -55 °C |