N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220SIS Toshiba TK17A65W,S5X(M

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MOSFET Transistors, Toshiba

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17 A
Maximum Drain Source Voltage	650 V
Package Type	TO-220SIS
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	10mm
Maximum Operating Temperature	+150 °C
Width	4.5mm
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	45 nC @ 10 V
Series	TK
Height	15mm