N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD IXYS MMIX1T550N055T2
- RS庫存編號:
- 875-2500
- 製造零件編號:
- MMIX1T550N055T2
- 製造商:
- IXYS
當前暫無庫存，可於2024/11/15發貨，3 工作日送達。
已增加
單價 个
HK$379.53
| 單位 | Per unit |
| 1 - 4 | HK$379.53 |
| 5 - 9 | HK$370.04 |
| 10 + | HK$364.35 |
- RS庫存編號:
- 875-2500
- 製造零件編號:
- MMIX1T550N055T2
- 製造商:
- IXYS
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 550 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | SMPD |
| Series | GigaMOS, HiperFET |
| Mounting Type | Surface Mount |
| Pin Count | 24 |
| Maximum Drain Source Resistance | 1.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Power Dissipation | 830 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 23.25mm |
| Typical Gate Charge @ Vgs | 595 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 25.25mm |
| Height | 5.7mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |