N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1
- RS庫存編號:
- 914-0223P
- 製造零件編號:
- IPD80R1K0CEATMA1
- 製造商:
- Infineon
可享批量折扣
Price 个 (以每卷裝提供)**. 連續帶的數量低於 150
HK$9.37
2340 現貨庫存，可於3工作日發貨。*
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 HK$850.00 即可享受 免費 送貨服務
單位 | 每單位 |
|---|---|
| 630 - 1240 | HK$9.13 |
| 1250 + | HK$8.99 |
** 參考價格
- RS庫存編號:
- 914-0223P
- 製造零件編號:
- IPD80R1K0CEATMA1
- 製造商:
- Infineon
豁免
Infineon CoolMOS™ CE Power MOSFET
Infineon CoolMOS™ CE Series MOSFET, 5.7A Maximum Continuous Drain Current, 83W Maximum Power Dissipation - IPD80R1K0CEATMA1
This MOSFET provides solutions for power management and general electronics, leveraging advanced CoolMOS CE technology with high voltage capabilities up to 800V. It boasts high efficiency and low on-state resistance, optimising design while enhancing reliability.
Features & Benefits
• Increased power density allows for more compact system designs
• Reduced cooling requirements lead to cost savings for systems
• Lower operating temperatures enhance system reliability
• High peak current capability supports rigorous applications
• Reliable dv/dt rating ensures stability under rapid voltage changes
• Complies with RoHS standards for environmentally sound use
• Reduced cooling requirements lead to cost savings for systems
• Lower operating temperatures enhance system reliability
• High peak current capability supports rigorous applications
• Reliable dv/dt rating ensures stability under rapid voltage changes
• Complies with RoHS standards for environmentally sound use
Applications
• Used in LED lighting solutions for retrofit installations
• Suitable for QR flyback topology in power supplies
• Effective within automotive power distribution systems
• Ideal for various high-voltage industrial
• Suitable for QR flyback topology in power supplies
• Effective within automotive power distribution systems
• Ideal for various high-voltage industrial
How does the MOSFET enhance system performance in power management?
It improves power density and reduces thermal requirements, leading to enhanced efficiency and lower energy losses during operation.
What are the benefits of using this device in LED lighting applications?
It delivers dependable performance with less heat generation, contributing to longevity and stability in lighting systems.
Is this compatible with high-frequency applications?
Yes, its low gate charge and high peak current capabilities make it apt for high-frequency operations, ensuring minimal switching losses.
What is the maximum continuous drain current for this device?
The maximum continuous drain current is rated at 5.7A, making it suitable for various power-intensive applications.
What temperature range can it operate within?
It operates effectively between -55°C and +150°C, offering versatility across different environments.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.7 A |
| Maximum Drain Source Voltage | 800 V |
| Series | CoolMOS™ CE |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 950 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.9V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 83 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V |
| Length | 6.73mm |
| Transistor Material | Si |
| Width | 6.22mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 2.41mm |