N-Channel MOSFET, 179 A, 30 V, 3-Pin DPAK Infineon IRFR8314TRPBF

RS庫存編號:: 915-5027
製造零件編號:: IRFR8314TRPBF
製造商:: Infineon

N-Channel MOSFET, 179 A, 30 V, 3-Pin DPAK Infineon IRFR8314TRPBF

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10 現貨庫存，可於3工作日發貨。

單價个（每托盘 10 ）

HK$10.726

單位	Per unit	Per Pack*
10 - 490	HK$10.726	HK$107.26
500 - 990	HK$10.538	HK$105.38
1000 +	HK$10.346	HK$103.46
* 參考價格

RS庫存編號:: 915-5027
製造零件編號:: IRFR8314TRPBF
製造商:: Infineon

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產品詳細資訊

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

規格

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	179 A
Maximum Drain Source Voltage	30 V
Package Type	DPAK (TO-252)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	3.1 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	36 nC @ 4.5 V
Length	6.73mm
Width	7.49mm
Forward Diode Voltage	1V
Minimum Operating Temperature	-55 °C
Height	2.39mm