IRFR8314TRPBF N-Channel MOSFET, 179 A, 30 V HEXFET, 3-Pin DPAK Infineon

  • RS庫存編號 915-5027
  • 製造零件編號 IRFR8314TRPBF
  • 製造商 Infineon
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N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

規格
Attribute Value
Channel Type N
Maximum Continuous Drain Current 179 A
Maximum Drain Source Voltage 30 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 3.1 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.2V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 125 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Width 7.49mm
Typical Gate Charge @ Vgs 36 nC @ 4.5 V
Minimum Operating Temperature -55 °C
Transistor Material Si
Length 6.73mm
Forward Diode Voltage 1V
Maximum Operating Temperature +175 °C
Series HEXFET
Height 2.39mm
1960 現貨庫存,可於3工作日發貨。
單價 /個 (每包:10個)
HK$ 9.67
(不含稅)
單位
Per unit
Per Pack*
10 - 90
HK$9.67
HK$96.70
100 - 490
HK$7.916
HK$79.16
500 - 990
HK$6.698
HK$66.98
1000 - 2490
HK$6.216
HK$62.16
2500 +
HK$5.877
HK$58.77
* 參考價格
包裝方式: