C3M0065090J SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed

  • RS庫存編號 915-8830P
  • 製造零件編號 C3M0065090J
  • 製造商 Wolfspeed
COO (Country of Origin): CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Attribute Value
Channel Type N
Maximum Continuous Drain Current 35 A
Maximum Drain Source Voltage 900 V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 7
Maximum Drain Source Resistance 78 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.1V
Minimum Gate Threshold Voltage 1.8V
Maximum Power Dissipation 113 W
Transistor Configuration Single
Maximum Gate Source Voltage +25 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Forward Diode Voltage 4.4V
Maximum Operating Temperature +150 °C
Transistor Material SiC
Length 10.23mm
Typical Gate Charge @ Vgs 30 nC @ 15 V
Height 4.57mm
Width 10.99mm
2868 現貨庫存,可於3工作日發貨。
單價 個 (以每管裝提供)
HK$ 92.38
Per unit
10 - 24
25 - 49
50 - 99
100 +